IAUC50N08S5N102ATMA1 Infineon IAUC50N08S5N102ATMA1 is an N-Channel MOSFET with 80V drain-source voltage, 50A continuous drain current, and low on-resistance of 10.2mOhm. Offered in a PG-TDSON-8 surface-mount package.
Mfr Part #:

IAUC50N08S5N102ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IAUC50N08S5N102ATMA1 is an N-Channel MOSFET with 80V drain-source voltage, 50A continuous drain current, and low on-resistance of 10.2mOhm. Offered in a PG-TDSON-8 surface-mount package.
✓ Total Stock: 3,752 pcs
$ Price Range: $0.45

IAUC50N08S5N102ATMA1 Available from 1 distributor

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IAUC50N08S5N102ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IAUC50N08S5N102ATMA1 Description

Short technical summary and product information.

The Infineon IAUC50N08S5N102ATMA1 is an N-Channel enhancement mode MOSFET built on the OptiMOS-5 technology. It features a drain-source voltage rating of 80V and a continuous drain current of 50A at VGS=10V and Tj=25°C. The typical on-resistance is 8.4 mOhm at VGS=10V, ID=25A, with a maximum of 10.2 mOhm. The device is capable of pulsed drain current up to 200A and is avalanche rated for 45 mJ single pulse energy. Switching performance is characterized by a typical turn-on delay of 4 ns, rise time of 2 ns, and total gate charge of 16 nC (typical). The MOSFET is designed for automotive applications and operates over a junction temperature range of -55°C to 175°C. Thermal resistance from junction to case is 2.5 K/W, and junction to ambient is 24.9 K/W on a standard 2s2p FR4 PCB. The device is housed in a PG-TDSON-8-33 (8-PowerTDFN) surface-mount package, which is RoHS compliant and MSL1 rated up to 260°C peak reflow temperature. These characteristics make it suitable for high-efficiency power conversion, motor control, and battery management systems in automotive and industrial environments.

IAUC50N08S5N102ATMA1 Quick Information

Product Type: MOSFET Transistor
Series: OptiMOS-5
Canonical Name: N-Channel MOSFET, 80V, 50A, OptiMOS-5, PG-TDSON-8-33
Subcategory: Power MOSFET

IAUC50N08S5N102ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IAUC50N08S5N102ATMA1 Estimated Pricing

Qty Low High
5,000+ $0.45 $0.45

Estimated market price range - modelled values for guidance only, not live distributor offers.

IAUC50N08S5N102ATMA1 Features

  • Low on-resistance of 10.2 mOhm typical.
  • Fast switching with 4 ns turn-on delay.
  • Avalanche rated for 45 mJ single pulse.
  • Operating temperature up to 175°C.
  • RoHS and MSL1 compliant.

IAUC50N08S5N102ATMA1 Applications

  • Automotive engine control modules.
  • DC-DC converters and power supplies.
  • Motor drive and solenoid control.
  • Battery management systems.

IAUC50N08S5N102ATMA1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of this MOSFET?

The drain-source voltage rating is 80V.

What is the package type?

The package is PG-TDSON-8-33 (8-PowerTDFN).

What is the operating temperature range?

The operating temperature range is -55°C to 175°C.

Is this device RoHS compliant?

Yes, it is RoHS3 compliant as per the datasheet.

What is the continuous drain current rating?

The continuous drain current is 50A at VGS=10V and Tj=25°C.

What is the typical on-resistance?

The typical on-resistance is 8.4 mOhm at VGS=10V, ID=25A, with a maximum of 10.2 mOhm.

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