| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90 pcs
|
90 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| Reverse Recovery Time |
The Infineon IAUC41N06S5L100 is an N-channel, enhancement-mode, logic-level OptiMOS™-5 power MOSFET specifically engineered for automotive applications. It offers a drain-source breakdown voltage of 60V and can handle a continuous drain current of up to 41A.
Key electrical characteristics include a low on-state resistance, with a maximum of 10 mΩ at VGS=10V and ID=20A, and 13.9 mΩ at VGS=4.5V and ID=20A. The gate threshold voltage typically sits at 1.7V. Dynamic characteristics such as input capacitance (Ciss) are up to 1205 pF, output capacitance (Coss) up to 238 pF, and reverse transfer capacitance (Crss) up to 18 pF.
This MOSFET operates within a temperature range of -55°C to +175°C and has a power dissipation of 42W at 25°C. It is supplied in a PG-TDSON-8-33 package, suitable for surface mounting.
The device is 100% avalanche tested and is RoHS compliant, making it a reliable choice for various automotive power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The typical gate threshold voltage is 1.7V.
The maximum continuous drain current is 41A.
The maximum on-state resistance at VGS=10V and ID=20A is 10 mΩ.
The operating and storage temperature range is -55°C to +175°C.
It is supplied in the PG-TDSON-8-33 package.