| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Reverse Recovery Time |
The Infineon IAUC120N06S5N017 is an N-channel OptiMOS™-5 power MOSFET specifically engineered for demanding automotive applications. This enhancement-mode, normal-level transistor features a 60V drain-source breakdown voltage and a maximum continuous drain current of 120A.
Key electrical characteristics include a typical gate threshold voltage of 2.8V and a low on-state resistance, with RDS(on) typically 1.3mΩ at 10V VGS and 60A ID. Dynamic characteristics such as input capacitance (Ciss) are typically 5348pF, output capacitance (Coss) at 1160pF, and reverse transfer capacitance (Crss) at 56pF.
This device operates within a temperature range of -55°C to +175°C and has a power dissipation of 167W at 25°C case temperature. It is supplied in a PG-TDSON-8-43 package, suitable for surface mounting.
The IAUC120N06S5N017 is 100% avalanche tested and is RoHS compliant, making it a reliable choice for automotive power management systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 60V.
The typical gate threshold voltage is 2.8V.
The maximum continuous drain current is 120A.
The typical on-state resistance is 1.3mΩ.
The operating temperature range is -55°C to +175°C.
It is supplied in a PG-TDSON-8-43 package.
Yes, it is RoHS3 Compliant.