| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,420 pcs
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1420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IAUC120N04S6N013 is a high-performance N-channel power MOSFET from the OptiMOS™- 6 series, specifically engineered for demanding automotive applications. This enhancement-mode, normal-level device features a drain-source breakdown voltage of 40V and can handle a continuous drain current of up to 120A at 25°C with a VGS of 10V.
Key electrical characteristics include a low typical on-state resistance of 1.02mW at VGS=10V and ID=60A, and a maximum of 1.34mW. The device also exhibits a gate threshold voltage ranging from 2.2V to 3.0V. Dynamic characteristics such as input capacitance, output capacitance, and reverse transfer capacitance are provided, along with switching times like turn-on delay and rise time.
This MOSFET is qualified to AEC Q101 standards and operates at temperatures up to 175°C. It comes in a PG-TDSON-8 package suitable for surface mounting. The product is also noted as being Green Product compliant (RoHS compliant) and is 100% avalanche tested.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The continuous drain current is 120A.
The typical on-state resistance is 1.02mW.
The operating temperature range is -55°C to +175°C.
It is supplied in a PG-TDSON-8 package.
Yes, it is AEC Q101 qualified.