| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,842 pcs
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1842 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
650 pcs
|
650 pcs | On Request | 1 | On Request | On Request | 21+22+ | On Request | On Request |
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The IAUC120N04S6N010 from Infineon is an N-channel enhancement mode, normal level OptiMOS™- 6 power MOSFET specifically designed for automotive applications. This AEC Q101 qualified component features a drain-source breakdown voltage of 40V and can handle a continuous drain current of up to 120A at 25°C with a VGS of 10V. Its low on-state resistance, with a typical value of 0.81mΩ at VGS=10V and ID=60A, makes it suitable for high-efficiency power management.
The MOSFET operates within a temperature range of -55°C to +175°C and has a power dissipation of 150W at 25°C. It is packaged in a PG-TDSON-8 surface-mount package. The component is also MSL1 rated up to 260°C peak reflow and is RoHS compliant, indicating its suitability for modern electronic designs.
Key electrical characteristics include a gate threshold voltage between 2.2V and 3.0V, and various capacitance values such as Ciss, Coss, and Crss, which are important for dynamic performance. The device also includes a reverse diode with a continuous forward current rating of 120A.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The continuous drain current is 120A.
The typical on-state resistance is 0.81mΩ at VGS=10V and ID=60A.
The operating temperature range is -55°C to +175°C.
It is in a PG-TDSON-8 package.
Yes, the IAUC120N04S6N010 is AEC Q101 qualified.
The Moisture Sensitivity Level is 1 Unlimited.