| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,357 pcs
|
1357 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| Reverse Recovery Time |
The Infineon IAUC120N04S6N009 is an N-channel, enhancement-mode, normal-level OptiMOS™ - 6 power MOSFET specifically designed for automotive applications. It is AEC Q101 qualified and features a 40V drain-source breakdown voltage.
Key electrical characteristics include a maximum drain-source on-state resistance of 0.9 mΩ at VGS=10V and ID=60A, and a continuous drain current of 120A at TC=25°C and TC=100°C. The device operates over a wide temperature range from -55°C to +175°C.
This MOSFET is housed in a PG-TDSON-8 package, suitable for surface mount applications. It also boasts a moisture sensitivity level of 1 and is RoHS compliant, making it a reliable choice for demanding automotive environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The maximum continuous drain current is 120A.
The typical gate threshold voltage is 2.8V.
The maximum drain-source on-state resistance is 1.1mΩ at VGS=7V, ID=60A.
The operating and storage temperature range is -55°C to +175°C.
The IAUC120N04S6N009 is in the PG-TDSON-8 package.
Yes, this MOSFET is AEC Q101 qualified for automotive applications.