IAUC100N08S5N031ATMA1 N-Channel MOSFET from Infineon Technologies, rated for 80V drain-source voltage and 100A continuous drain current. Features low on-resistance of 3.1mΩ and AEC Q101 qualification.
Mfr Part #:

IAUC100N08S5N031ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies, rated for 80V drain-source voltage and 100A continuous drain current. Features low on-resistance of 3.1mΩ and AEC Q101 qualification.
✓ Total Stock: 2,200 pcs
$ Price Range: $0.90 - $2.88

IAUC100N08S5N031ATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,200 pcs
2200 pcs On Request 1 On Request On Request 22+ On Request On Request

IAUC100N08S5N031ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
SVHC Present
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

IAUC100N08S5N031ATMA1 Description

Short technical summary and product information.

The IAUC100N08S5N031ATMA1 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS-5 series. It is designed for high efficiency power conversion applications.

 

Key electrical specifications include a drain-source breakdown voltage of 80V, continuous drain current of 100A at 25°C, and a maximum drain-source on-resistance of 3.1mΩ at Vgs=10V. The device is AEC Q101 qualified for automotive applications and operates over a junction temperature range of -55°C to 175°C.

 

The MOSFET is housed in a PG-TDSON-8-34 surface mount package (8-PowerTDFN), offering a compact footprint for space-constrained designs. It features low gate charge (76nC max) and fast switching times, making it suitable for high-frequency switching applications.

IAUC100N08S5N031ATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS-5
Canonical Name: Infineon Technologies IAUC100N08S5N031ATMA1 N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

IAUC100N08S5N031ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IAUC100N08S5N031ATMA1 Estimated Pricing

Qty Low High
1+ $2.88 $2.88
10+ $1.86 $1.86
100+ $1.28 $1.28
500+ $1.03 $1.03
1,000+ $0.97 $0.97
2,500+ $0.93 $0.93
5,000+ $0.90 $0.90

Estimated market price range - modelled values for guidance only, not live distributor offers.

IAUC100N08S5N031ATMA1 Features

  • N-channel enhancement mode power MOSFET.
  • 80V drain-source breakdown voltage rating.
  • 100A continuous drain current capability.
  • Low on-resistance of 3.1mΩ maximum.
  • AEC Q101 qualified for automotive use.

IAUC100N08S5N031ATMA1 Applications

  • Used in automotive power management systems.
  • Suitable for DC-DC converters and inverters.
  • Ideal for motor control and solenoid drivers.
  • Applicable in high-frequency switching power supplies.

IAUC100N08S5N031ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

80V.

What is the continuous drain current?

100A at Tc=25°C with Vgs=10V.

What is the on-resistance?

3.1mΩ maximum at Vgs=10V, Id=50A.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is this device RoHS compliant?

Yes, RoHS3 compliant per datasheet.

What package does it come in?

PG-TDSON-8-34 (8-PowerTDFN) surface mount package.

Is it automotive qualified?

Yes, AEC Q101 qualified.

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