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IAUC100N08S5N031 The Infineon IAUC100N08S5N031 is an N-channel Power MOSFET designed for automotive applications. It offers high performance with 80V breakdown voltage and 100A continuous drain current.
Mfr Part #:

IAUC100N08S5N031

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IAUC100N08S5N031 is an N-channel Power MOSFET designed for automotive applications. It offers high performance with 80V breakdown voltage and 100A continuous drain current.
✓ Total Stock: 2,580 pcs
$ Price Range: $2.40

IAUC100N08S5N031 Available from 1 distributor

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✓ Non-Authorised
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2,580 pcs
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IAUC100N08S5N031 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Input Capacitance
Mounting Type
Operating Temperature
Power Dissipation
Reverse Recovery Time
SVHC Present
Storage Temperature
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IAUC100N08S5N031 Description

Short technical summary and product information.

The Infineon IAUC100N08S5N031 is an N-channel enhancement mode Power MOSFET from the OptiMOS™-5 family. It is AEC Q101 qualified and designed for demanding automotive applications.

 

Key electrical specifications include a drain-source breakdown voltage of 80V, a maximum drain-source on-state resistance of 3.1mΩ at VGS=10V and ID=50A, and a continuous drain current of 100A at TC=25°C. The device also features a typical gate threshold voltage of 3.0V and a total gate charge of 76nC.

 

With an operating temperature range of -55°C to +175°C and a thermal resistance of 0.9 K/W, this MOSFET is built for reliability. It comes in a PG-TDSON-8 surface-mount package, suitable for various power management circuits.

 

This MOSFET is 100% avalanche tested and is a green product, compliant with RoHS standards.

IAUC100N08S5N031 Quick Information

Product Type: N-channel Power MOSFET
Series: OptiMOS™-5
Canonical Name: Infineon IAUC100N08S5N031 N-channel Power MOSFET
Subcategory: N-channel

IAUC100N08S5N031 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IAUC100N08S5N031 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IAUC100N08S5N031 Features

  • N-channel enhancement mode MOSFET.
  • AEC Q101 qualified for automotive use.
  • 80V drain-source breakdown voltage.
  • Low on-resistance: 3.1mΩ max.
  • 100A continuous drain current.

IAUC100N08S5N031 Applications

  • Ideal for industrial motor drive inverters.
  • Used in high-efficiency DC-DC converter stages.
  • Suitable for automotive battery management systems.
  • Applied in solar microinverter power conversion.
  • Designed for synchronous rectifier bridge circuits.

IAUC100N08S5N031 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage rating?

80V

What package type does this MOSFET use?

PG-TDSON-8

What is the operating temperature range?

-55°C to +175°C

What is the typical gate threshold voltage?

3.0V

How much total gate charge does the device require?

76nC maximum

What is the reverse recovery time of the integrated body diode?

54ns typical

Can the part handle single-pulse avalanche energy?

Yes, up to 250mJ at 100A avalanche current

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