IAUC100N04S6N015ATMA1 The IAUC100N04S6N015ATMA1 is an N-Channel power MOSFET from Infineon's OptiMOS-6 series. It features a 40V drain-source voltage and 100A continuous drain current.
Mfr Part #:

IAUC100N04S6N015ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IAUC100N04S6N015ATMA1 is an N-Channel power MOSFET from Infineon's OptiMOS-6 series. It features a 40V drain-source voltage and 100A continuous drain current.
✓ Total Stock: 1,000,000 pcs
$ Price Range: $0.52 - $2.03

IAUC100N04S6N015ATMA1 Available from 1 distributor

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IAUC100N04S6N015ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IAUC100N04S6N015ATMA1 Description

Short technical summary and product information.

The IAUC100N04S6N015ATMA1 is an N-Channel enhancement mode power MOSFET from Infineon Technologies' OptiMOS-6 series. It is designed for automotive applications and is AEC Q101 qualified. The device is housed in a PG-TDSON-8 surface mount package and supports an operating temperature range of -55°C to +175°C. Key electrical ratings include a drain-source breakdown voltage of 40 V, continuous drain current of 100 A at Tc=25°C with Vgs=10V, and a maximum drain-source on-resistance of 1.55 mΩ at Vgs=10V, Id=50A. The gate threshold voltage ranges from 2.2 V to 3.0 V at Id=50µA. The MOSFET is RoHS compliant (Green Product) and 100% avalanche tested. Dynamic characteristics include input capacitance of 2669 pF typical, output capacitance of 819 pF, and reverse transfer capacitance of 38 pF. Switching times are typical with turn-on delay of 7 ns, rise time of 4 ns, turn-off delay of 15 ns, and fall time of 5 ns. The thermal resistance junction-to-case is 1.5 K/W and junction-to-ambient is 50 K/W with 6 cm² cooling area. This device is suitable for high-current switching applications in automotive, industrial, and telecom power systems.

IAUC100N04S6N015ATMA1 Quick Information

Product Type: Power MOSFET
Series: OptiMOS-6
Canonical Name: IAUC100N04S6N015ATMA1
Subcategory: N-Channel Power MOSFET

IAUC100N04S6N015ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Compliant
Lead Free: Yes

IAUC100N04S6N015ATMA1 Estimated Pricing

Qty Low High
1+ $2.03 $2.03
10+ $1.19 $1.19
100+ $0.85 $0.85
500+ $0.69 $0.69
1,000+ $0.60 $0.60
5,000+ $0.54 $0.54
10,000+ $0.52 $0.52

Estimated market price range - modelled values for guidance only, not live distributor offers.

IAUC100N04S6N015ATMA1 Features

  • 40V drain-source breakdown voltage.
  • 100A continuous drain current.
  • Low on-resistance of 1.55 mΩ max.
  • AEC Q101 qualified for automotive.
  • PG-TDSON-8 surface mount package.

IAUC100N04S6N015ATMA1 Applications

  • Suitable for automotive power management systems.
  • Used in DC-DC converters and motor controls.
  • Ideal for high-current switching applications.
  • Designed for server and telecom power supplies.

IAUC100N04S6N015ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of this MOSFET?

40 V.

What is the package type?

PG-TDSON-8.

What is the operating temperature range?

-55°C to +175°C.

Is this MOSFET RoHS compliant?

Yes, it is a Green Product (RoHS compliant).

What is the continuous drain current rating?

100 A at Tc=25°C, Vgs=10V.

What is the gate threshold voltage range?

2.2 V to 3.0 V at Id=50µA.

What is the maximum drain-source on-resistance?

1.55 mΩ at Vgs=10V, Id=50A.

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