| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,750 pcs
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6750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IAUC100N04S6L025 is a high-performance N-channel power MOSFET from the OptiMOS™- 6 family, specifically engineered for demanding automotive applications. This enhancement-mode, logic-level device features a 40V drain-source breakdown voltage and is rated for a continuous drain current of up to 100A at 25°C.
Key electrical characteristics include a low on-state resistance, with a maximum of 2.56 mΩ at VGS=10V and ID=50A. The device also boasts a gate threshold voltage ranging from 1.2V to 2.0V. Dynamic performance is supported by capacitance values such as input capacitance (Ciss) up to 2019 pF and output capacitance (Coss) up to 566 pF.
Designed for reliability, the IAUC100N04S6L025 is AEC Q101 qualified and operates at temperatures from -55°C to +175°C. It is supplied in a PG-TDSON-8 package, suitable for surface mounting.
This MOSFET is 100% avalanche tested and features a green product designation, indicating RoHS compliance. Its robust design makes it suitable for various automotive power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 100A at TC=25°C, VGS=10V.
The drain-source breakdown voltage is 40V.
The maximum on-state resistance is 2.56 mΩ at VGS=10V and ID=50A.
The operating and storage temperature range is -55°C to +175°C.
It is supplied in the PG-TDSON-8 package.
Yes, the IAUC100N04S6L025 is AEC Q101 qualified.