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The Siemens HYB4164-P2 is a dynamic random-access memory (DRAM) chip with a capacity of 64K by 1 bit, totaling 65,536 bits. This NMOS device operates with a maximum access time of 200 nanoseconds.
It supports two primary refresh cycle types: 128 cycles within a 2-millisecond limit, or 256 cycles within a 4-millisecond limit. The 128-cycle type corresponds to a cell matrix of 128 rows by 512 columns, while the 256-cycle type uses a matrix of 256 rows by 256 columns. Pin 1 on this chip is typically not connected (N.C.).
While some makers did not use '4164' in their part numbers, this Siemens part clearly identifies its class. The CMOS equivalent is often referred to as the 5164 class. This component is suitable for systems requiring NMOS DRAM with specific refresh rate capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.50 | $1.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Siemens HYB4164-P2 has a capacity of 64K by 1 bit, which is 65,536 bits.
The maximum access time for the HYB4164-P2 is 200 nanoseconds.
The HYB4164-P2 supports both 128 cycles within 2ms and 256 cycles within 4ms.
Pin 1 on the HYB4164-P2 is typically not connected (N.C.).
The RoHS status is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.