| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | 0650 | On Request | On Request |
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The Qimonda HYB25D512800CE-5 is a 512-Mbit Double-Data-Rate SDRAM, internally configured as a quad-bank DRAM. It utilizes a double-data-rate architecture for high-speed operation, achieving two data transfers per clock cycle.
Key features include a 200 MHz maximum clock frequency at CL3, a supply voltage range of 2.3V to 2.7V, and a 0°C to 70°C operating temperature. The memory interface is parallel, and it supports programmable CAS latency (2, 2.5, 3) and burst lengths (2, 4, or 8).
This component is housed in a 66-TSOP II package and is surface mountable. It also features a bidirectional data strobe (DQS), differential clock inputs, and auto refresh and self-refresh modes. The I/O is SSTL_2 compatible at 2.5V.
This memory IC is suitable for applications requiring high-speed data access and efficient memory operations.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 512 Mbit.
The maximum clock frequency is 200 MHz at CL3.
The operating voltage is between 2.3V and 2.7V.
It comes in a 66-TSOP II package.
The operating temperature range is 0°C to 70°C (TA).
Programmable CAS latency values are 2, 2.5, and 3.
Programmable burst lengths are 2, 4, or 8.