K4S511632D-UC75000
Samsung Electronics
The Samsung Electronics K4S511632D-UC75000 is a 512Mbit SDRAM with an LVTTL interface. It operates at 133MHz and comes in a TSOP package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The Infineon HYB25D512160BE-6 is a 512Mbit Double Data Rate Synchronous Dynamic Random-Access Memory (SDRAM) integrated circuit. This component is designed for memory applications requiring high-speed data transfer.
Key specifications include its 512Mbit capacity and Double Data Rate (DDR) SDRAM technology. The part is noted as RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited shelf life under recommended conditions.
This memory IC is suitable for various electronic systems where efficient and reliable memory is crucial. Its DDR SDRAM interface allows for faster data throughput compared to older SDRAM generations.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HYB25D512160BE-6 is a 512Mbit Double Data Rate SDRAM.
The memory capacity is 512Mbit.
Yes, the HYB25D512160BE-6 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.