| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
169 pcs
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169 pcs | On Request | 1 | On Request | On Request | 0510 | On Request | On Request |
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The Infineon HYB18M512160AF-7.5 is a 512-Mbit DDR Mobile-RAM, designed for mobile applications. This component adheres to RoHS3 compliance standards and has a Moisture Sensitivity Level (MSL) of 1 Unlimited, indicating it is not sensitive to moisture under normal conditions.
This DRAM is part of Infineon's Mobile-RAM family, offering specific performance characteristics suitable for mobile devices. Further details on its electrical and thermal specifications can be found in the product datasheet. The component is manufactured by Infineon Technologies AG.
This part is classified under the Memory category, specifically as a DRAM. Its designation as a DDR Mobile-RAM suggests its application in systems requiring high-speed memory access within a mobile environment. The part number HYB18M512160AF-7.5 indicates specific speed and configuration details.
For detailed technical specifications, including operating voltage, temperature ranges, and package information, refer to the official Infineon documentation. The REACH status is listed as 'REACH Unaffected'.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HYB18M512160AF-7.5 has a memory size of 512 Mbit.
The HYB18M512160AF-7.5 is a DDR Mobile-RAM.
The HYB18M512160AF-7.5 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the HYB18M512160AF-7.5 is 1 Unlimited.
The REACH status for the HYB18M512160AF-7.5 is REACH Unaffected.