HY628100B The HY628100B is a 1M bit CMOS Static Random Access Memory from SK Hynix. It is organized as 131,072 words by 8 bits and designed for high speed and low power applications.
Mfr Part #:

HY628100B

Available from 1 distributors
Mfr Name: Hyundai
Hyundai
The HY628100B is a 1M bit CMOS Static Random Access Memory from SK Hynix. It is organized as 131,072 words by 8 bits and designed for high speed and low power applications.
✓ Total Stock: 21 pcs
$ Price Range: $0.99

HY628100B Available from 1 distributor

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HY628100B Specifications Quick View

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HY628100B Description

Short technical summary and product information.

The HY628100B is a high-speed, low-power 1M bit CMOS Static Random Access Memory (SRAM) manufactured by SK Hynix. This component is organized into 131,072 words by 8 bits, providing a total of 1 megabit of memory.

 

Utilizing a high-performance CMOS process, the HY628100B is engineered for applications demanding both rapid data access and minimal power consumption. Its design focuses on efficient circuit technology to meet these requirements.

 

This SRAM is suitable for various electronic systems where fast and reliable memory is crucial. Its specifications make it a versatile choice for embedded systems, data logging, and other applications requiring quick read and write operations.

HY628100B Quick Information

Product Type: SRAM
Canonical Name: 1M bit CMOS Static Random Access Memory
Subcategory: Static RAM

HY628100B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HY628100B Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

HY628100B Features

  • High-speed CMOS SRAM with 1M bit capacity.
  • Organized as 131,072 words by 8 bits.
  • Designed for low power and high performance.
  • Uses CMOS technology for efficient operation.
  • Part number HY628100B from SK Hynix.

HY628100B Applications

  • Suitable for high-speed data access
  • Ideal for low-power electronic systems
  • Used in embedded system designs
  • Applicable for data logging needs

HY628100B FAQs

4 frequently asked questions generated from this part’s specifications.
What is the organization of the HY628100B SRAM?

The HY628100B is organized as 131,072 words by 8 bits.

What type of memory is the HY628100B?

The HY628100B is a CMOS Static Random Access Memory (SRAM).

What is the total bit count for the HY628100B?

The HY628100B has a total bit count of 1M bit.

What technology is used in the HY628100B?

The HY628100B uses high performance CMOS process technology.

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