| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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21 pcs
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21 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The HY628100B is a high-speed, low-power 1M bit CMOS Static Random Access Memory (SRAM) manufactured by SK Hynix. This component is organized into 131,072 words by 8 bits, providing a total of 1 megabit of memory.
Utilizing a high-performance CMOS process, the HY628100B is engineered for applications demanding both rapid data access and minimal power consumption. Its design focuses on efficient circuit technology to meet these requirements.
This SRAM is suitable for various electronic systems where fast and reliable memory is crucial. Its specifications make it a versatile choice for embedded systems, data logging, and other applications requiring quick read and write operations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HY628100B is organized as 131,072 words by 8 bits.
The HY628100B is a CMOS Static Random Access Memory (SRAM).
The HY628100B has a total bit count of 1M bit.
The HY628100B uses high performance CMOS process technology.