| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
65 pcs
|
65 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Lead Spacing | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| SVHC Present |
The HY5DU281622ETP-J is a DDR1 Synchronous Dynamic Random-Access Memory (SDRAM) component from Hynix Semiconductor. This part is designed for memory applications requiring DDR1 technology.
Key specifications include a RoHS3 Compliant status and a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for a wide range of manufacturing environments. The component is housed in a TSOP-66 package, which is a standard surface-mount form factor.
This memory component is part of Hynix's DDR memory offerings. Its specific electrical characteristics, such as operating voltage, data rate, and memory density, would typically be detailed in the manufacturer's datasheet. The TSOP-66 packaging suggests suitability for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HY5DU281622ETP-J is a DDR1 SDRAM memory component.
This component is supplied in a TSOP-66 package.
The HY5DU281622ETP-J is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for this component is Level 1.
