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HY3810P The HY3810P is an N-Channel Enhancement Mode MOSFET manufactured by HOOYI. It features a Drain-Source Voltage of 100V.
Mfr Part #:

HY3810P

Available from 1 distributors
Mfr Name: Infineon
Infineon
The HY3810P is an N-Channel Enhancement Mode MOSFET manufactured by HOOYI. It features a Drain-Source Voltage of 100V.
✓ Total Stock: 142 pcs
$ Price Range: $1.17

HY3810P Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
142 pcs
On Request
142 pcs On Request 1 On Request On Request 23+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

HY3810P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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HY3810P Description

Short technical summary and product information.

The HY3810P is an N-Channel Enhancement Mode MOSFET from HOOYI. This component is designed for electronic applications requiring a MOSFET with a Drain-Source Voltage rating of 100V.

 

As an enhancement mode MOSFET, the HY3810P offers efficient switching and control capabilities. Its N-Channel configuration makes it suitable for a wide range of circuit designs.

 

Further specifications such as continuous drain current, power dissipation, and operating temperature are typically detailed in the manufacturer's datasheet, which should be consulted for detailed application suitability.

HY3810P Quick Information

Product Type: MOSFET
Canonical Name: HY3810P N-Channel Enhancement Mode MOSFET
Subcategory: N-Channel Enhancement Mode

HY3810P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HY3810P Estimated Pricing

Qty Low High
1+ $1.17 $1.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

HY3810P Features

  • N-Channel Enhancement Mode MOSFET
  • 100V Drain-Source Voltage rating
  • Manufactured by HOOYI

HY3810P Applications

  • Used in power management circuits
  • Suitable for DC-DC converter applications
  • Ideal for motor control systems
  • Applied in battery protection circuits

HY3810P FAQs

3 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Voltage of the HY3810P?

The Drain-Source Voltage of the HY3810P is 100V.

What type of MOSFET is the HY3810P?

The HY3810P is an N-Channel Enhancement Mode MOSFET.

Who manufactures the HY3810P?

The HY3810P is manufactured by HOOYI.

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