| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The HY27US08121B-TPCB is an unbuffered 184-pin DDR DIMM organized as 32Mx64 high-speed memory arrays. It consists of eight 32Mx8 DDR SDRAM chips in 400mil TSOP II packages on a 184-pin glass-epoxy substrate.
This memory module operates with a power supply voltage of 2.3V to 2.7V (2.5V typical) for both VDD and VDDQ. It supports SSTL_2 interface and features fully differential clock operations at 100MHz, 125MHz, and 133MHz. All addresses and control inputs are latched on the rising clock edge, while data, data strobes, and write masks are latched on both rising and falling edges.
Key features include programmable CAS Latency (2/2.5) and programmable Burst Length (2/4/8) in both sequential and interleave modes. It also supports auto refresh and self-refresh operations with 8192 refresh cycles per 64ms. The module is suitable for easy interchange and addition in standard 5.25" width form factors.
The HY27US08121B-TPCB is packaged in a TSOP (Thin Small Outline Package) suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HY27US08121B-TPCB has a memory size of 256MB.
The operating voltage (VDD and VDDQ) for the HY27US08121B-TPCB is 2.3V to 2.7V, with a typical value of 2.5V.
The HY27US08121B-TPCB uses the SSTL_2 interface.
The HY27US08121B-TPCB supports clock frequencies of 100MHz, 125MHz, and 133MHz.
The HY27US08121B-TPCB supports programmable CAS Latency values of 2 and 2.5.
The HY27US08121B-TPCB is supplied in a TSOP package.