| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
622 pcs
|
622 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUFA76645S3ST-F085 is an N-Channel power MOSFET from ON Semiconductor, designed for high-efficiency switching applications.
This device features a drain-to-source voltage rating of 100V and a continuous drain current of 75A at 25°C case temperature. With a maximum on-resistance of 14mOhm at 10V gate drive and 75A, it offers low conduction losses. The gate charge is 153nC maximum at 10V, and input capacitance is 4400pF typical at 25V drain-source.
The MOSFET is housed in a surface-mount D2PAK (TO-263) package, supporting high power dissipation of up to 310W. Operating temperature range is -55°C to 175°C junction, suitable for demanding environments. Drive voltage is 4.5V to 10V, offering design flexibility.
| Qty | Low | High |
|---|---|---|
| 622+ | $2.02 | $2.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 100V.
The continuous drain current is 75A at 25°C case temperature.
Maximum on-resistance is 14mOhm at a gate-source voltage of 10V and drain current of 75A.
It comes in a surface mount D2PAK (TO-263) package.
The junction operating temperature range is -55°C to 175°C.
Maximum total gate charge is 153nC at a gate-source voltage of 10V.