| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,380 pcs
|
1380 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
HUFA76439P3 is an N-Channel power MOSFET from ON Semiconductor, built on the UltraFET process. This logic-level device provides a maximum drain-source voltage of 60V and can handle a continuous drain current of 75A at Tc=25°C with a 10V gate drive. At a 5V gate drive, the current rating is 71A, making it suitable for logic-level driving. The maximum on-resistance is 12mΩ at Vgs=10V and 14mΩ at Vgs=5V, with a maximum gate threshold voltage of 3V at 250µA.
Electrical ratings include a total gate charge of 84nC at Vgs=10V and an input capacitance of 2745pF at Vds=25V. Maximum power dissipation is 155W at Tc=25°C. The device operates across a junction temperature range of -55°C to 175°C. These characteristics support high-efficiency power switching applications.
The part is offered in a TO-220-3 through-hole package (JEDEC TO-220AB), which provides good thermal performance for power dissipation. It is designed for use in automotive and industrial power systems, motor control, DC-DC converters, and load switching.
| Qty | Low | High |
|---|---|---|
| 330+ | $0.91 | $0.91 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V
TO-220-3 through-hole (JEDEC TO-220AB).
-55°C to 175°C junction temperature.
Yes, listed as RoHS3 compliant in existing product data.
75A at Tc=25°C with Vgs=10V; 71A at Vgs=5V.
12mΩ at Vgs=10V, Id=75A; 14mΩ at Vgs=5V.
84nC at Vgs=10V.