Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	20A (Tc)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1480 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	110W (Tc)
Rds On (Max) @ Id, Vgs	23mOhm @ 20A, 10V
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±16V
Vgs(th) (Max) @ Id	3V @ 250µA

HUFA76429D3ST

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