HUFA76429D3 N-Channel 60V 20A power MOSFET in a through-hole I-PAK package. 23mOhm on-resistance at 10V gate drive.
Mfr Part #:

HUFA76429D3

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel 60V 20A power MOSFET in a through-hole I-PAK package. 23mOhm on-resistance at 10V gate drive.
✓ Total Stock: 1,306 pcs
$ Price Range: $1.19

HUFA76429D3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,306 pcs
1306 pcs On Request 1 On Request On Request On Request On Request On Request

HUFA76429D3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

HUFA76429D3 Description

Short technical summary and product information.

The HUFA76429D3 is an N-Channel power MOSFET from On Semiconductor, designed for general-purpose switching applications. It features a drain-source breakdown voltage of 60V and a continuous drain current rating of 20A at case temperature (Tc). The device offers a low maximum on-resistance of 23mOhm at 10V gate drive, enabling efficient power handling.

 

With a gate threshold voltage of 3V maximum and a total gate charge of 46nC, the HUFA76429D3 is suitable for medium-speed switching. The input capacitance is 1480pF at 25V drain-source bias. Maximum power dissipation is 110W at Tc, and the junction temperature range spans -55°C to 175°C.

 

The MOSFET is housed in a through-hole TO-251-3 (I-PAK) package, compatible with standard PCB mounting. It is RoHS3 compliant and has an MSL of 1 (unlimited).

HUFA76429D3 Quick Information

Product Type: Single N-Channel Power MOSFET
Series: UltraFET
Canonical Name: HUFA76429D3 N-Channel Power MOSFET
Subcategory: Single N-Channel Power MOSFET

HUFA76429D3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HUFA76429D3 Estimated Pricing

Qty Low High
1,306+ $1.19 $1.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUFA76429D3 Features

  • N-Channel 60V drain-source voltage.
  • 20A continuous drain current rating.
  • 23mOhm maximum on-resistance at 10V.
  • Through-hole I-PAK package for easy mounting.
  • RoHS3 compliant with MSL 1.

HUFA76429D3 Applications

  • Power supply switching circuits.
  • DC-DC converter output stages.
  • Motor drive and control applications.
  • General purpose load switching.

HUFA76429D3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the HUFA76429D3?

The maximum drain-source voltage (Vdss) is 60V.

What is the maximum continuous drain current?

The continuous drain current is 20A at case temperature (Tc).

What is the on-resistance of this MOSFET?

The maximum on-resistance is 23mOhm at 20A drain current and 10V gate drive.

What package does the HUFA76429D3 come in?

It is supplied in a through-hole I-PAK package (TO-251-3).

What is the operating temperature range?

The junction temperature range is -55°C to 175°C.

Is the HUFA76429D3 RoHS compliant?

Yes, it is listed as RoHS3 compliant.

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