Mfr Part #:

HUFA76419D3ST

N-Channel MOSFET from On Semiconductor with 60V drain-source voltage and 20A continuous drain current. Features 37mOhm on-resistance at 20A, 10V gate drive.

✓ Total Stock: 113 pcs

$ Price Range: $0.74

HUFA76419D3ST Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	113 pcs On Request	113 pcs	On Request	1	On Request	On Request	15+	On Request	On Request

HUFA76419D3ST Description

Short technical summary and product information.

This N-Channel MOSFET (part number HUFA76419D3ST) is manufactured by On Semiconductor. It is designed for switching and power management applications. The device has a maximum drain-source voltage (Vdss) of 60V and can handle continuous drain current (Id) up to 20A at case temperature (Tc). The on-resistance (Rds(on)) is typically 37mOhm at 20A with a 10V gate drive. It requires a gate drive voltage between 4.5V and 10V for optimal performance. The gate threshold voltage (Vgs(th)) is 3V maximum at 250µA drain current. Input capacitance (Ciss) is 900pF at 25V Vds, and gate charge (Qg) is 27.5nC at 10V. Power dissipation is up to 75W at case temperature. The device is rated for junction temperature from -55°C to 175°C. It is housed in a surface mount TO-252-3 package (DPak, SC-63), specifically the TO-252AA supplier device package. This package is suitable for automated assembly. The device is RoHS3 compliant and has an MSL of 1 (unlimited floor life).

HUFA76419D3ST Quick Information

Product Type: Single N-Channel MOSFET

Canonical Name: N-Channel Logic Level UltraFET MOSFET

Subcategory: Single MOSFET

HUFA76419D3ST Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): MSL 1 Unlimited

REACH Status: Non-Compliant

HUFA76419D3ST Estimated Pricing

Qty	Low	High
405+	$0.74	$0.74

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUFA76419D3ST Features

N-Channel MOSFET with 60V drain-source rating.
Continuous drain current up to 20 amperes.
Low on-resistance of 37 milliohms.
Logic level gate drive compatible.
Surface mount TO-252AA package.

HUFA76419D3ST Applications

Suitable for DC-DC converter circuits.
Used in power management systems.
Ideal for motor control applications.
Applicable in load switching designs.

HUFA76419D3ST FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the HUFA76419D3ST?

60V.

What is the continuous drain current rating?

20A at case temperature.

What is the on-resistance of this MOSFET?

37 milliohms at 20A and 10V gate voltage.

What is the operating temperature range?

-55°C to 175°C junction.

What package is the HUFA76419D3ST available in?

TO-252-3 (DPak, SC-63) surface mount package, supplier device package TO-252AA.

Is this component RoHS compliant?

Yes, reported as RoHS3 compliant, but not verified.

What is the gate threshold voltage?

3V maximum at 250µA drain current.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	20A (Tc)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	75W (Tc)
Rds On (Max) @ Id, Vgs	37mOhm @ 20A, 10V
Supplier Device Package	TO-252AA
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±16V
Vgs(th) (Max) @ Id	3V @ 250µA