HUFA76409D3ST The HUFA76409D3ST is a 60V, 18A N-Channel Logic Level UltraFET MOSFET from On Semiconductor. It features a maximum on-resistance of 63 mOhm at 10V and is offered in a TO-252AA surface mount package.
Mfr Part #:

HUFA76409D3ST

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The HUFA76409D3ST is a 60V, 18A N-Channel Logic Level UltraFET MOSFET from On Semiconductor. It features a maximum on-resistance of 63 mOhm at 10V and is offered in a TO-252AA surface mount package.
✓ Total Stock: 3,068 pcs

HUFA76409D3ST Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,068 pcs
3068 pcs On Request 1 On Request On Request 1049+07+ On Request On Request

HUFA76409D3ST Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

HUFA76409D3ST Description

Short technical summary and product information.

The HUFA76409D3ST is an N-Channel Logic Level UltraFET MOSFET manufactured by On Semiconductor. It is designed for efficient switching and power management applications, with a drain-to-source voltage rating of 60 V and a continuous drain current of 18 A at case temperature (Tc). The device features a low maximum on-resistance of 63 mOhm, measured at 18 A and 10 V gate drive. Gate charge is typically 15 nC at 10 V, and input capacitance is 485 pF at 25 V drain-source voltage.

 

This MOSFET supports gate drive voltages of 4.5 V and 10 V, making it suitable for logic-level control. The maximum gate threshold voltage is 3 V at 250 µA drain current, and the maximum gate-to-source voltage is ±16 V. Power dissipation is rated at 49 W at case temperature. The device is built using MOSFET (Metal Oxide) technology and operates over a junction temperature range of -55°C to 175°C.

 

The HUFA76409D3ST is supplied in a surface mount TO-252-3 / DPak (2 leads plus tab) package, also known as SC-63, with a supplier device package of TO-252AA. This package is standard for power discrete components and is compatible with automated assembly processes.

HUFA76409D3ST Quick Information

Product Type: Single N-Channel MOSFET
Series: UltraFET
Canonical Name: HUFA76409D3ST N-Channel Logic Level UltraFET MOSFET
Subcategory: N-Channel Logic Level MOSFET

HUFA76409D3ST Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HUFA76409D3ST Features

  • N-Channel Logic Level UltraFET MOSFET.
  • Drain-source voltage rated 60 V.
  • Continuous drain current 18 A at Tc.
  • Maximum on-resistance 63 mOhm at 10V.
  • Surface mount TO-252AA (DPak) package.

HUFA76409D3ST Applications

  • Used in DC-DC converter circuits.
  • Ideal for power management systems.
  • Suitable for motor control applications.
  • Works in load switching designs.

HUFA76409D3ST FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the HUFA76409D3ST?

The drain-to-source voltage (Vdss) is 60 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 18 A at case temperature (Tc).

What is the maximum on-resistance of this MOSFET?

The maximum drain-to-source on-resistance is 63 mOhm at Id=18 A, Vgs=10 V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package options are available for the HUFA76409D3ST?

The device is supplied in a surface mount TO-252-3 / DPak (2 Leads + Tab) / SC-63 package, with supplier device package TO-252AA.

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