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HUFA76407DK8T-F085 The HUFA76407DK8T-F085 is a dual N-Channel MOSFET from On Semiconductor. It features a 60V drain-source voltage, 90mOhm on-resistance, and logic level gate drive in an 8-SOIC surface mount package.
Mfr Part #:

HUFA76407DK8T-F085

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The HUFA76407DK8T-F085 is a dual N-Channel MOSFET from On Semiconductor. It features a 60V drain-source voltage, 90mOhm on-resistance, and logic level gate drive in an 8-SOIC surface mount package.
Total Stock: 7,500 pcs
$ Price Range: $0.85 - $2.75

HUFA76407DK8T-F085 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,500 pcs
7500 pcs On Request 1 On Request On Request On Request On Request On Request

HUFA76407DK8T-F085 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

HUFA76407DK8T-F085 Description

Short technical summary and product information.

The HUFA76407DK8T-F085 is a dual N-Channel MOSFET (Metal Oxide) from On Semiconductor, designed for surface mount applications. It is configured as two independent N-Channel MOSFETs in a single 8-SOIC package, offering a compact solution for space-constrained designs.

 

Key electrical specifications include a drain-source breakdown voltage of 60V, maximum on-resistance of 90mOhm at 3.8A and 10V gate drive, and a maximum gate charge of 11.2nC at 10V. The device features a logic level gate, allowing it to be driven by low-voltage logic signals. Input capacitance is 330pF at 25V. The operating temperature range is -55°C to 150°C, with a maximum power dissipation of 2.5W.

 

The MOSFET is housed in an 8-SOIC (0.154", 3.90mm width) package with surface mount mounting. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). The device is suitable for applications requiring dual N-Channel switching with moderate voltage and current handling.

HUFA76407DK8T-F085 Quick Information

Product Type: MOSFET Array
Series: UltraFET
Canonical Name: HUFA76407DK8T-F085 Dual N-Channel MOSFET
Subcategory: Dual N-Channel MOSFET

HUFA76407DK8T-F085 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HUFA76407DK8T-F085 Estimated Pricing

Qty Low High
1+ $2.75 $2.75
10+ $1.76 $1.76
100+ $1.20 $1.20
500+ $1.10 $1.10
1,000+ $0.90 $0.90
2,500+ $0.85 $0.85

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUFA76407DK8T-F085 Features

  • Dual N-Channel MOSFET in 8-SOIC package.
  • 60V drain-source breakdown voltage.
  • 90mOhm on-resistance at 3.8A, 10V.
  • Logic level gate for low voltage drive.
  • RoHS3 compliant and MSL 1 rated.

HUFA76407DK8T-F085 Applications

  • Power management in portable devices.
  • DC-DC converter switching circuits.
  • Motor control for small motors.
  • Battery protection circuits.
  • General purpose dual MOSFET switching.

HUFA76407DK8T-F085 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the HUFA76407DK8T-F085?

The drain-source breakdown voltage is 60V.

What package is the HUFA76407DK8T-F085 available in?

It is available in an 8-SOIC (0.154", 3.90mm width) surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the HUFA76407DK8T-F085 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the on-resistance of this MOSFET?

Maximum on-resistance is 90mOhm at 3.8A drain current and 10V gate-source voltage.

Does it have a logic level gate?

Yes, it features a logic level gate for low voltage drive.

What is the gate charge?

Maximum gate charge is 11.2nC at 10V.

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