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HUFA76407DK8T The HUFA76407DK8T is a dual N-Channel logic level power MOSFET from On Semiconductor. It features a 60V drain-source breakdown voltage, 3.8A continuous drain current, and low on-resistance of 90mOhm at 10V.
Mfr Part #:

HUFA76407DK8T

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The HUFA76407DK8T is a dual N-Channel logic level power MOSFET from On Semiconductor. It features a 60V drain-source breakdown voltage, 3.8A continuous drain current, and low on-resistance of 90mOhm at 10V.
Total Stock: 150,133 pcs
$ Price Range: $0.53 - $0.57

HUFA76407DK8T Available from 3 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
139,077 pcs
139077 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
5,543 pcs
5543 pcs On Request 1 On Request On Request 0947+ On Request On Request
Non-Authorised Inventory information
5,513 pcs
5513 pcs On Request 1 On Request On Request On Request On Request On Request

HUFA76407DK8T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Drain Current (Continuous) (Maximum @ TA=100 °C, Vgs=4.5 V)
Drain Current (Continuous) (Maximum @ TA=100 °C, Vgs=5 V)
Drain Current (Continuous) (Maximum @ TA=25 °C, Vgs=5 V)
Drain Current Continuous (Maximum @ Ta = 25 °C, Vgs = 10 V)
Drain to Source Voltage (Vdss)
Drain-Source On-Resistance (Maximum @ Id=3.5 A, Vgs=5 V)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Gate-to-Source Voltage
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Pulsed Drain Current
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

HUFA76407DK8T Description

Short technical summary and product information.

The HUFA76407DK8T is a dual N-Channel logic level power MOSFET from On Semiconductor, part of the UltraFET family. It is designed for surface mount applications and is housed in an 8-SOIC package (JEDEC MS-012AA).

 

Key electrical specifications include a drain-source breakdown voltage of 60V, continuous drain current of 3.8A at 25°C with Vgs=10V, and a maximum on-resistance of 90mOhm at Vgs=10V. The device features a logic level gate, allowing it to be driven by low voltage logic signals. It also has a maximum gate charge of 11.2nC and input capacitance of 330pF.

 

The device is rated for operation over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W at 25°C ambient. The tape and reel variant (suffix T) is suitable for automated assembly.

HUFA76407DK8T Quick Information

Product Type: Power MOSFET Array
Canonical Name: HUFA76407DK8T Dual N-Channel Logic Level Power MOSFET
Subcategory: Logic Level Gate Power MOSFET

HUFA76407DK8T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HUFA76407DK8T Estimated Pricing

Qty Low High
2,500+ $0.57 $0.57
5,000+ $0.53 $0.53
7,500+ $0.53 $0.53

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUFA76407DK8T Features

  • Dual N-Channel logic level MOSFET.
  • 60V drain-source breakdown voltage.
  • 3.8A continuous drain current at 25°C.
  • Low on-resistance of 90mOhm at 10V.
  • Surface mount 8-SOIC package.

HUFA76407DK8T Applications

  • Ideal for low voltage DC-DC converters.
  • Used in automotive load switching applications.
  • Suitable for power management in portable devices.
  • Applicable for motor control circuits.

HUFA76407DK8T FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the HUFA76407DK8T?

The drain-source breakdown voltage (Vdss) is 60V.

What is the maximum continuous drain current?

The maximum continuous drain current is 3.8A at 25°C with Vgs=10V, and 3.5A at 25°C with Vgs=5V.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 90mOhm at Vgs=10V (Id=3.8A) and 105mOhm at Vgs=5V (Id=3.5A).

What package is the HUFA76407DK8T available in?

It is available in an 8-SOIC surface mount package (JEDEC MS-012AA).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the HUFA76407DK8T RoHS compliant?

The part is listed as RoHS3 Compliant, though this status is unverified.

Does this MOSFET have a logic level gate?

Yes, it features a logic level gate, allowing it to be fully turned on with 5V gate drive.

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