HUFA75645S3S N-Channel power MOSFET rated for 100V drain-source voltage and 75A continuous drain current. Features low on-resistance of 14mΩ at 10V drive, in surface-mount D2PAK package.
Mfr Part #:

HUFA75645S3S

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel power MOSFET rated for 100V drain-source voltage and 75A continuous drain current. Features low on-resistance of 14mΩ at 10V drive, in surface-mount D2PAK package.
✓ Total Stock: 6,363 pcs
$ Price Range: $2.52 - $5.57

HUFA75645S3S Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,363 pcs
5363 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

HUFA75645S3S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

HUFA75645S3S Description

Short technical summary and product information.

The HUFA75645S3S is an N-channel power MOSFET from ON Semiconductor. It is designed for high-current switching applications, offering a maximum drain-to-source voltage of 100V and a continuous drain current of 75A. The device features a low maximum on-resistance of 14mΩ at a gate-source voltage of 10V, which helps minimize conduction losses.

 

The MOSFET is housed in a surface-mount D2PAK (TO-263) package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 175°C, making it suitable for demanding environments. The gate is rated for ±20V, and the maximum gate threshold voltage is 4V at 250µA.

 

With an input capacitance of 3790pF and a gate charge of 238nC, the device is capable of fast switching in power conversion circuits. Its power dissipation is rated at 310W at case temperature, indicating robust thermal performance when properly heatsinked.

 

This MOSFET is commonly used in power supplies, DC-DC converters, and motor control circuits where high efficiency and reliable switching are required.

HUFA75645S3S Quick Information

Product Type: MOSFET
Series: UltraFET
Canonical Name: N-Channel MOSFET, 100V, 75A, D2PAK (TO-263)
Subcategory: Power MOSFET

HUFA75645S3S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HUFA75645S3S Estimated Pricing

Qty Low High
1+ $5.57 $5.57
10+ $3.72 $3.72
100+ $2.68 $2.68
500+ $2.52 $2.52
800+ $2.52 $2.52

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUFA75645S3S Features

  • 100V maximum drain-source voltage.
  • 75A continuous drain current rating.
  • Low 14mΩ on-resistance.
  • Surface-mount D2PAK package.
  • ±20V maximum gate-source voltage.

HUFA75645S3S Applications

  • Used in high-efficiency DC-DC converters
  • Suitable for motor drive and control circuits
  • Ideal for power supply switching stages
  • Applied in battery management systems
  • Common in automotive power distribution

HUFA75645S3S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the HUFA75645S3S?

The maximum drain-to-source voltage is 100V.

What is the package type of this MOSFET?

It comes in a TO-263-3 (D2PAK) surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the HUFA75645S3S RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified from the source.

What is the maximum continuous drain current?

The maximum continuous drain current is 75A at case temperature (Tc).

What is the maximum on-resistance?

The maximum on-resistance is 14mΩ at a drain current of 75A and gate-source voltage of 10V.

What is the gate threshold voltage?

The maximum gate threshold voltage is 4V at a drain current of 250µA.

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