| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,600 pcs
|
5600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUFA75639S3ST-F085A is an N-Channel power MOSFET from On Semiconductor, designed for high-efficiency power switching applications. It features a drain-source voltage rating of 100V and can handle a continuous drain current of 56A. The device exhibits a low on-resistance of 25 mOhm at 10V gate drive, minimizing conduction losses.
With a maximum gate charge of 130 nC and input capacitance of 2000 pF, this MOSFET is suitable for moderate-speed switching. It operates over a junction temperature range of -55°C to 175°C and can dissipate up to 200W of power.
The device is housed in a surface-mount D2PAK (TO-263) package, which offers a compact footprint with good thermal performance. This part is intended for use in power supplies, motor control, and automotive systems.
| Qty | Low | High |
|---|---|---|
| 182+ | $1.65 | $1.65 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100V.
The continuous drain current (Tc) is 56A.
The maximum on-resistance is 25 mOhm at 56A drain current and 10V gate drive.
It is available in a D2PAK (TO-263) surface-mount package.
The operating junction temperature range is -55°C to 175°C.