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HUFA75639S3ST N-Channel MOSFET from On Semiconductor with 100V drain-source voltage, 56A continuous drain current, and 25mOhm on-resistance. Surface mount package D²PAK (TO-263).
Mfr Part #:

HUFA75639S3ST

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET from On Semiconductor with 100V drain-source voltage, 56A continuous drain current, and 25mOhm on-resistance. Surface mount package D²PAK (TO-263).
✓ Total Stock: 5,600 pcs
$ Price Range: $1.68

HUFA75639S3ST Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
5,600 pcs
On Request
5600 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

HUFA75639S3ST Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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HUFA75639S3ST Description

Short technical summary and product information.

The HUFA75639S3ST is an N-Channel MOSFET manufactured by On Semiconductor. It is designed for high-power switching applications requiring efficient performance.

 

Key electrical specifications include a drain-source voltage (Vdss) of 100V, continuous drain current (Id) of 56A at case temperature, and a maximum drain-source on-resistance (Rds(on)) of 25mOhm at 56A and 10V gate drive. The gate charge (Qg) is 130nC maximum at 10V, and input capacitance (Ciss) is 2000pF at 25V. Maximum power dissipation is 200W at case temperature.

 

The device is offered in a surface mount D²PAK (TO-263) package, with an operating junction temperature range of -55°C to 175°C. It is listed as RoHS3 compliant, with MSL 1 (unlimited) and REACH unaffected status.

HUFA75639S3ST Quick Information

Product Type: MOSFET - Single
Series: UltraFET
Canonical Name: N-Channel MOSFET, 100V, 56A, 25mOhm, D²PAK (TO-263)
Subcategory: N-Channel MOSFET

HUFA75639S3ST Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Non-Compliant
Lead Free: Yes

HUFA75639S3ST Estimated Pricing

Qty Low High
179+ $1.68 $1.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUFA75639S3ST Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • 56A continuous drain current capability.
  • Low on-resistance of 25 milliohms.
  • Surface mount D²PAK (TO-263) package.
  • Wide operating temperature range -55°C to 175°C.

HUFA75639S3ST Applications

  • Suitable for high-power switching circuits.
  • Used in power management applications.
  • Applicable for DC-DC converter designs.
  • Commonly used in motor drive circuits.

HUFA75639S3ST FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

100V.

What is the continuous drain current?

56A at case temperature.

What is the on-resistance?

25mOhm maximum at 56A and 10V gate drive.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What package is this MOSFET available in?

Surface mount D²PAK (TO-263).

Is this component RoHS compliant?

Listed as RoHS3 compliant (unverified).

What is the gate charge?

130nC maximum at 10V gate-source voltage.

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