HUFA75429D3ST N-Channel power MOSFET from On Semiconductor, featuring 60V breakdown voltage and 20A continuous drain current. Ultra-low on-resistance of 25mΩ at 10V gate drive.
Mfr Part #:

HUFA75429D3ST

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel power MOSFET from On Semiconductor, featuring 60V breakdown voltage and 20A continuous drain current. Ultra-low on-resistance of 25mΩ at 10V gate drive.
✓ Total Stock: 2,350 pcs
$ Price Range: $0.50 - $0.54

HUFA75429D3ST Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,350 pcs
2350 pcs On Request 1 On Request On Request 03+ On Request On Request

HUFA75429D3ST Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Junction Temperature
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Tape Width
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

HUFA75429D3ST Description

Short technical summary and product information.

The HUFA75429D3ST is an N-Channel power MOSFET manufactured by On Semiconductor using the advanced UltraFET process. This technology achieves very low on-resistance per silicon area, resulting in high efficiency for power switching applications. Key electrical specifications include a drain-source voltage rating of 60V, continuous drain current of 20A at 25°C case temperature, and a maximum on-resistance of 25mΩ at 10V gate drive.

 

The device features a maximum junction temperature of 175°C, thermal resistance of 1.2°C/W junction-to-case, and avalanche energy capability of 312mJ. It is designed to meet AEC-Q101 automotive requirements, making it suitable for automotive and industrial environments. The MOSFET is available in a TO-252-3 (DPAK) surface mount package, supplied in tape and reel with 2500 units per reel.

 

Typical applications include motor and load control, powertrain management, switching regulators, converters, and relay drivers. The device's low gate charge (85nC) and fast switching characteristics enable efficient operation at high frequencies.

HUFA75429D3ST Quick Information

Product Type: Power MOSFET
Series: UltraFET
Canonical Name: On Semiconductor HUFA75429D3ST N-Channel MOSFET
Subcategory: N-Channel

HUFA75429D3ST Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
REACH Status: REACH Unaffected

HUFA75429D3ST Estimated Pricing

Qty Low High
2,500+ $0.54 $0.54
5,000+ $0.50 $0.50
7,500+ $0.50 $0.50

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUFA75429D3ST Features

  • N-Channel MOSFET rated for 60V drain-source voltage.
  • Continuous drain current of 20A at 25°C case temperature.
  • Ultra-low on-resistance of 25mΩ at 10V gate drive.
  • Maximum junction temperature of 175°C.
  • Designed for automotive applications per AEC-Q101 requirements.

HUFA75429D3ST Applications

  • Motor and load control applications.
  • Powertrain management systems.
  • Switching regulators and converters.
  • Relay and solenoid drivers.
  • Low-voltage bus switching.

HUFA75429D3ST FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the HUFA75429D3ST?

The drain-source voltage rating is 60V maximum.

What is the continuous drain current rating?

Continuous drain current is 20A at 25°C case temperature with VGS=10V, and 4A at 125°C.

What package is this MOSFET available in?

It is available in a TO-252-3 (DPAK) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the HUFA75429D3ST RoHS compliant?

It is listed as RoHS3 compliant, but this claim is unverified (low confidence).

What is the on-resistance of this MOSFET?

Maximum on-resistance is 25mΩ at VGS=10V, ID=20A; typical value is 21mΩ.

What is the gate charge specification?

Maximum gate charge is 85nC at VGS=20V.

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