| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy Rating | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUFA75333P3 is an N-Channel UltraFET power MOSFET manufactured by ON Semiconductor (formerly Fairchild Semiconductor). It is rated for a drain-source voltage of 55V and a continuous drain current of 66A at case temperature. The maximum on-resistance is 16mOhm at 66A and 10V gate drive. The gate threshold voltage is 4V maximum at 250µA. The device can dissipate up to 150W at case temperature and operates over a junction temperature range of -55°C to 175°C. It features a maximum gate charge of 85nC at 20V and input capacitance of 1300pF at 25V drain-source voltage. The MOSFET is designed for high-efficiency switching applications and can withstand high energy in avalanche mode. It is packaged in a TO-220-3 through-hole package, suitable for heatsink mounting. The part is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 400+ | $0.86 | $0.86 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
TO-220-3 through-hole package.
-55°C to 175°C (junction).
Yes, RoHS3 compliant (unverified).
55V.
66A at case temperature.
16mOhm maximum at 66A and 10V gate drive.
4V maximum at 250µA.