HUFA75332S3S N-Channel power MOSFET rated for 55V drain-source voltage and 60A continuous drain current. Features 19mOhm maximum on-resistance and is housed in a D2PAK (TO-263) surface mount package.
Mfr Part #:

HUFA75332S3S

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel power MOSFET rated for 55V drain-source voltage and 60A continuous drain current. Features 19mOhm maximum on-resistance and is housed in a D2PAK (TO-263) surface mount package.
✓ Total Stock: 2,289 pcs
$ Price Range: $0.85

HUFA75332S3S Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,289 pcs
2289 pcs On Request 1 On Request On Request 02+ On Request On Request

HUFA75332S3S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

HUFA75332S3S Description

Short technical summary and product information.

The HUFA75332S3S is an N-Channel power MOSFET from On Semiconductor, manufactured using the UltraFET process. This device is rated for a maximum drain-source voltage of 55V and a continuous drain current of 60A. It features a low maximum on-resistance of 19mOhm at 10V gate drive, enabling high efficiency in power conversion applications.

 

The MOSFET offers a maximum gate threshold voltage of 4V and can withstand gate-source voltages up to ±20V. It has an input capacitance of 1300pF and a total gate charge of 85nC, which are important parameters for switching performance. The device is capable of dissipating up to 145W and operates over a junction temperature range of -55°C to 175°C.

 

The HUFA75332S3S is supplied in a D2PAK (TO-263) surface mount package, which is suitable for automated assembly processes. It is designed for use in switching regulators, DC-DC converters, motor drivers, and power management circuits where efficiency and thermal performance are critical.

HUFA75332S3S Quick Information

Product Type: Power MOSFET
Canonical Name: HUFA75332S3S N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

HUFA75332S3S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HUFA75332S3S Estimated Pricing

Qty Low High
400+ $0.85 $0.85

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUFA75332S3S Features

  • N-Channel MOSFET rated for 55V and 60A.
  • Low on-resistance of 19mOhm at 10V gate drive.
  • Surface mount D2PAK (TO-263) package.
  • Operating temperature range from -55°C to 175°C.
  • UltraFET process for high efficiency.

HUFA75332S3S Applications

  • Ideal for switching regulator and converter circuits.
  • Used in motor and relay driver applications.
  • Suitable for power management in portable devices.
  • Designed for low-voltage bus switching.

HUFA75332S3S FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the HUFA75332S3S?

The maximum drain-source voltage (Vdss) is 55V.

What is the continuous drain current rating?

The continuous drain current is 60A.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 19mOhm at a drain current of 60A and gate-source voltage of 10V.

What package is the HUFA75332S3S available in?

It is available in a D2PAK (TO-263) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the HUFA75332S3S RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this value is unverified and should be treated as low-confidence.

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