| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
120,533 pcs
|
120533 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUFA75309T3ST is an N-Channel power MOSFET manufactured using the UltraFET process, designed for power efficiency in switching applications. It is rated for a maximum drain-to-source voltage of 55V and a continuous drain current of 3A at 25°C ambient temperature.
The device features an ultra-low maximum on-resistance of 70mOhm at a gate drive voltage of 10V and 3A drain current. The gate threshold voltage is 4V maximum at 250µA drain current, and the maximum gate-source voltage rating is ±20V. Total gate charge is 23nC at 20V gate-source voltage, with input capacitance of 352pF at 25V drain-source voltage.
This MOSFET is suitable for power management in portable and battery-operated products, switching regulators, switching converters, motor drivers, relay drivers, and low-voltage bus switches. The body diode exhibits high speed and soft recovery characteristics.
The device is available in a surface-mount SOT-223-4 package (TO-261-4, TO-261AA case) and is supplied in tape and reel packaging. It operates over a junction temperature range of -55°C to 150°C with maximum power dissipation of 1.1W at 25°C ambient.
| Qty | Low | High |
|---|---|---|
| 550+ | $0.55 | $0.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 55V.
The maximum continuous drain current is 3A at 25°C ambient temperature.
The maximum on-resistance is 70mOhm at a drain current of 3A and gate-source voltage of 10V.
The junction operating temperature range is -55°C to 150°C.
The device is available in a surface-mount SOT-223-4 package (TO-261-4, TO-261AA case).
The maximum power dissipation is 1.1W at 25°C ambient temperature.
The maximum gate threshold voltage is 4V at a drain current of 250µA.