| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
452,000 pcs
|
452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUFA75307T3ST is an N-Channel power MOSFET manufactured by On Semiconductor. It is designed for switching and amplification applications requiring a drain-to-source voltage rating of 55 V and a continuous drain current of 2.6 A at ambient temperature. The device uses metal-oxide semiconductor technology and is specified with a maximum on-resistance of 90 mΩ at a gate-to-source voltage of 10 V.
Key electrical characteristics include a maximum gate threshold voltage of 4 V at a drain current of 250 µA, and a maximum gate-source voltage of ±20 V. The total gate charge is 17 nC at Vgs = 20 V, and the input capacitance is 250 pF at Vds = 25 V. These parameters make the device suitable for low-power switching circuits.
The MOSFET can dissipate up to 1.1 W at ambient temperature and operates over a junction temperature range of -55°C to +150°C. It is offered in the industry-standard TO-261-4 (SOT-223-4) surface-mount package, which supports compact PCB designs and automated assembly.
| Qty | Low | High |
|---|---|---|
| 888+ | $0.34 | $0.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating (Vdss) is 55 V.
The maximum continuous drain current is 2.6 A at ambient temperature (Ta).
The maximum on-resistance is 90 mΩ at a drain current of 2.6 A and gate-source voltage of 10 V.
It is available in the TO-261-4 (TO-261AA) package, also known as the supplier device package SOT-223-4, with surface mount mounting.
The operating junction temperature range is -55°C to +150°C.
The database lists this part as RoHS3 Compliant; however, this status is unverified and should be confirmed before compliance-critical use.
The maximum gate-source voltage is ±20 V.