| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,524 pcs
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2524 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF76645S3S is an N-channel logic-level power MOSFET from On Semiconductor, built with UltraFET technology. It is rated for a maximum drain-source voltage of 100V and supports a continuous drain current of 75A at case temperature 25°C, derating to 63A at 100°C with VGS=5V.
The device offers very low on-resistance of 14mΩ maximum at VGS=10V and 15mΩ maximum at VGS=5V, enabling efficient operation in logic-level gate drive designs. Maximum gate charge is 153nC at VGS=10V and input capacitance is 4400pF at VDS=25V. The gate threshold voltage is 3V maximum at 250µA, and the gate-source voltage range is ±16V.
Power dissipation is rated at 310W maximum at case temperature 25°C, with an operating junction temperature range of -55°C to +175°C. The MOSFET is housed in a surface-mount TO-263AB (D2PAK) package with 2 leads plus tab.
The maximum drain-to-source voltage is 100V.
The drain current is 75A at case temperature 25°C and 63A at 100°C with VGS=5V.
Maximum Rds(on) is 14mΩ at VGS=10V, Id=75A, and 15mΩ at VGS=5V.
-55°C to +175°C.
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB; supplier device package is D2PAK (TO-263).
310W at case temperature 25°C.
The part is listed as RoHS3 compliant, but this status is not independently verified.