| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF76639S3ST is an N-Channel MOSFET from On Semiconductor. It features a maximum drain-source voltage of 100V and a continuous drain current of 51A at case temperature. The on-resistance is typically 26mOhm at 10V gate drive, enabling efficient power switching.
Electrical characteristics include a gate charge of 86nC at 10V and an input capacitance of 2400pF at 25V drain-source voltage. The gate threshold voltage is 3V at 250µA. The device supports drive voltages from 4.5V to 10V for optimal performance.
Thermally, the MOSFET can dissipate up to 180W and operates over a temperature range of -55°C to 175°C. It is housed in a surface mount D2PAK (TO-263) package, making it suitable for high-density PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.67 | $2.67 |
| 10+ | $1.94 | $1.94 |
| 100+ | $1.46 | $1.46 |
| 500+ | $1.13 | $1.13 |
| 800+ | $0.97 | $0.97 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; supplier device package D²PAK (TO-263).
-55°C to 175°C (TJ).
According to the database, it is RoHS3 Compliant, but this is unverified.
Maximum 26mOhm at 51A and 10V gate-source voltage.
86nC at 10V.
51A at case temperature Tc.