| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF76629D3ST is an N-Channel MOSFET from On Semiconductor. It features a maximum drain-source voltage of 100V and a continuous drain current of 20A at Tc=25°C. The device offers a low on-resistance of 52mOhm maximum at 20A and 10V gate drive. Gate charge is 46nC maximum at 10V, and input capacitance is 1285pF maximum at 25V. Power dissipation is rated at 110W at Tc=25°C. The MOSFET operates over a junction temperature range of -55°C to 175°C. It is housed in a surface mount TO-252-3, DPak, or SC-63 package with a supplier device package of TO-252AA. This component is suitable for power management and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.86 | $3.86 |
| 10+ | $2.52 | $2.52 |
| 100+ | $1.83 | $1.83 |
| 2,500+ | $1.83 | $1.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V maximum.
20A at Tc=25°C.
52mOhm maximum at 20A, 10V.
46nC maximum at 10V.
-55°C to 175°C.
TO-252-3, DPak, SC-63; supplier package TO-252AA.
RoHS3 Compliant (unverified).