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HUF76609D3ST N-Channel MOSFET with 100V drain-source voltage, 10A continuous drain current, and 160mΩ max on-resistance. Surface-mount TO-252AA package.
Mfr Part #:

HUF76609D3ST

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 100V drain-source voltage, 10A continuous drain current, and 160mΩ max on-resistance. Surface-mount TO-252AA package.
✓ Total Stock: 2,086 pcs

HUF76609D3ST Available from 1 distributor

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✓ Non-Authorised
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2,086 pcs
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HUF76609D3ST Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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HUF76609D3ST Description

Short technical summary and product information.

The HUF76609D3ST from onsemi is an N-channel MOSFET built with metal-oxide semiconductor technology. It provides a maximum drain-to-source voltage of 100V and can conduct 10A continuous drain current at 25°C. The maximum on-resistance is 160mΩ when driven with a 10V gate-source voltage, and it also supports 4.5V drive for lower-voltage logic interfaces.

 

The device offers a total gate charge of 16nC at 10V, which supports efficient high-frequency switching. Input capacitance is rated at 425pF at 25V, and the maximum gate threshold voltage is 3V at 250µA. The absolute maximum gate-source voltage is ±16V. In thermal performance, it can dissipate up to 49W at the case temperature, and junction temperature operates from -55°C to 175°C.

 

The HUF76609D3ST is housed in a TO-252-3 (DPak, SC-63) surface-mount package with a supplier device package designation of TO-252AA. This surface-mount configuration allows compact PCB assembly and good heat transfer through the exposed pad. It is suited for power switching and load control functions in circuits requiring 100V voltage blocking and 10A current handling.

HUF76609D3ST Quick Information

Product Type: MOSFET Transistor
Canonical Name: N-Channel MOSFET, 100V, 10A, TO-252AA
Subcategory: Single N-Channel MOSFET

HUF76609D3ST Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HUF76609D3ST Features

  • N-channel MOSFET for 100V drain-source voltage.
  • Continuous drain current rated at 10A at 25°C.
  • Maximum on-resistance 160mΩ at 10V gate drive.
  • Gate charge of 16nC enables high-speed switching.
  • Surface-mount TO-252AA package for compact PCB layout.

HUF76609D3ST Applications

  • Power switching for 100V supply rails.
  • Load switching up to 10A continuous.
  • Compact surface-mount power circuits.

HUF76609D3ST FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

100V.

What continuous drain current can this MOSFET handle?

10A at a case temperature of 25°C.

What is the maximum on-resistance?

160mΩ at 10A drain current and 10V gate-source voltage.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What package is the HUF76609D3ST available in?

TO-252-3, DPak (2 leads + tab), SC-63; supplier package TO-252AA.

Is this device RoHS-compliant?

It is listed as RoHS3 compliant, but the status is unverified.

What is the total gate charge?

16nC at 10V gate-source voltage.

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