| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | 831 | On Request | On Request | |
|
211 pcs
|
211 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF76439S3ST is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for high-current switching applications with a maximum drain-to-source voltage of 60V and a maximum drain current of 75A at case temperature. The device offers a low maximum on-resistance of 12mOhm at a gate drive of 10V and 75A drain current, enabling efficient power conversion.
Key electrical characteristics include a maximum gate charge of 84nC at 10V gate-source voltage and a maximum input capacitance of 2745pF at 25V drain-source voltage. The gate threshold voltage is 3V maximum at 250µA drain current, and the device supports gate-source voltages up to ±16V. The recommended drive voltages are 4.5V and 10V for achieving maximum and minimum on-resistance respectively.
The MOSFET is rated for power dissipation up to 180W at case temperature and operates over a junction temperature range of -55°C to 175°C. It is housed in a TO-263-3 (D2PAK) surface-mount package with a supplier device package designation of D2PAK (TO-263), suitable for automated assembly and thermal management through the exposed tab.
This component is suitable for power management, DC-DC conversion, motor control, and other high-current switching circuits where low conduction losses and surface-mount packaging are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.67 | $3.67 |
| 10+ | $2.39 | $2.39 |
| 100+ | $1.67 | $1.67 |
| 500+ | $1.27 | $1.27 |
| 800+ | $1.27 | $1.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 60V.
The maximum drain current is 75A at case temperature (Tc).
The maximum on-resistance is 12mOhm at a drain current of 75A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 175°C.
The HUF76439S3ST is available in a TO-263-3 (D2PAK) surface-mount package.
The maximum power dissipation is 180W at case temperature (Tc).
The maximum gate threshold voltage is 3V at a drain current of 250µA.