| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF76429S3ST is an N-channel power MOSFET built with metal-oxide semiconductor technology from ON Semiconductor. It is rated for a maximum drain-to-source voltage of 60V and a continuous drain current of 47A at case temperature Tc. Maximum power dissipation at Tc is 110W, and the maximum on-state resistance is 22mΩ at Vgs = 10V and Id = 47A.
The device has a maximum gate threshold voltage of 3V at Id = 250µA, and supports gate drive voltages of 4.5V and 10V. Maximum gate charge is 46nC at Vgs = 10V, and maximum input capacitance at Vds = 25V is 1480pF. The junction operating temperature range is -55°C to 175°C.
The HUF76429S3ST is supplied in a TO-263-3 D²Pak surface-mount package, also referred to as D²PAK (TO-263), suitable for power switching circuits and high-current applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.83 | $2.83 |
| 10+ | $1.83 | $1.83 |
| 100+ | $1.26 | $1.26 |
| 800+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 60V.
It is available in a TO-263-3 D²Pak (D²PAK) surface-mount package, also known as TO-263AB.
The junction operating temperature range is from -55°C to 175°C.
The part is marked as RoHS3 compliant.
The continuous drain current is 47A at case temperature Tc.
The maximum drain-source on-state resistance is 22mΩ at Vgs = 10V and Id = 47A.
The maximum gate threshold voltage is 3V at Id = 250µA.