| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF76423P3 is an N-Channel enhancement-mode MOSFET from ON Semiconductor. It features a maximum drain-to-source voltage of 60V and a continuous drain current of 35A at case temperature. The device offers a maximum on-resistance of 30 milliohms when driven with 10V gate voltage, ensuring efficient switching in power applications.
This MOSFET is designed for through-hole mounting in a TO-220-3 package, which provides good thermal performance. The junction operating temperature range spans from -55°C to 175°C, allowing operation in harsh environments. The maximum power dissipation is 85W at case temperature.
Key electrical characteristics include a gate threshold voltage of 3V maximum at 250µA, a maximum gate charge of 34 nC at 10V, and an input capacitance of 1060 pF at 25V drain-source voltage. The device is RoHS3 compliant and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.20 | $2.20 |
| 10+ | $1.07 | $1.07 |
| 100+ | $1.00 | $1.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TO-220-3 through-hole package.
-55°C to 175°C junction temperature.
Yes, RoHS3 compliant.
35A.
3V maximum at 250µA.
30 milliohms maximum at 35A and 10V.