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HUF76419D3 N-Channel Logic Level UltraFET Power MOSFET, 60V drain-source voltage, 20A continuous drain current, 37mOhm on-resistance at 10V gate drive. Available in TO-251AA (I-PAK) through-hole package.
Mfr Part #:

HUF76419D3

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Logic Level UltraFET Power MOSFET, 60V drain-source voltage, 20A continuous drain current, 37mOhm on-resistance at 10V gate drive. Available in TO-251AA (I-PAK) through-hole package.
✓ Total Stock: 3,600 pcs

HUF76419D3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,600 pcs
On Request
3600 pcs On Request 1 On Request On Request On Request On Request On Request
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HUF76419D3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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HUF76419D3 Description

Short technical summary and product information.

The HUF76419D3 is an N-Channel Logic Level Power MOSFET from On Semiconductor's UltraFET family. It is designed for high-efficiency switching applications with a maximum drain-source voltage of 60V and continuous drain current of 20A at 25°C case temperature.

 

The device features a low on-resistance of 37mOhm maximum at Vgs=10V and 43mOhm at Vgs=5V, enabling logic-level gate drive. Gate threshold voltage is 3V maximum at 250µA. Total gate charge is 27.5nC at 10V, and input capacitance is 900pF at Vds=25V, allowing fast switching.

 

The MOSFET is housed in a TO-251AA (I-PAK) through-hole package with a maximum power dissipation of 75W at 25°C case temperature. Operating junction temperature range is -55°C to 175°C.

 

Suitable for DC-DC converters, motor control, and power management circuits where low on-resistance and logic-level drive are required.

HUF76419D3 Quick Information

Product Type: MOSFET
Series: UltraFET
Canonical Name: N-Channel MOSFET, 60V, 20A, 37mOhm, Logic Level, TO-251AA
Subcategory: N-Channel MOSFET

HUF76419D3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected

HUF76419D3 Features

  • Ultra low on-resistance of 37 milliohms.
  • Logic level gate drive at 5 volts.
  • Rated for 60V drain-source voltage.
  • Continuous drain current of 20 amps.
  • Through-hole TO-251AA I-PAK package.

HUF76419D3 Applications

  • Used in DC-DC converter circuits.
  • Ideal for motor control applications.
  • Suitable for power management systems.
  • Works in high-efficiency switching designs.

HUF76419D3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

60V.

What package is the HUF76419D3 available in?

TO-251AA (I-PAK) through-hole package.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is the HUF76419D3 RoHS compliant?

RoHS3 compliant (unverified).

What is the on-resistance at 10V gate drive?

37 milliohms maximum at Id=20A, Vgs=10V.

What is the total gate charge?

27.5 nC at Vgs=10V.

What is the continuous drain current?

20A at Tc=25°C with Vgs=5V or 10V.

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