HUF76407D3S N-Channel Power MOSFET from On Semiconductor, rated 60V drain-source voltage and 12A continuous drain current. Features low on-resistance of 92mOhm at 10V gate drive, suitable for high-efficiency switching applications.
Mfr Part #:

HUF76407D3S

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET from On Semiconductor, rated 60V drain-source voltage and 12A continuous drain current. Features low on-resistance of 92mOhm at 10V gate drive, suitable for high-efficiency switching applications.
✓ Total Stock: 9,264 pcs
$ Price Range: $0.31

HUF76407D3S Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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9,264 pcs
9264 pcs On Request 1 On Request On Request 06+ On Request On Request

HUF76407D3S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

HUF76407D3S Description

Short technical summary and product information.

The HUF76407D3S is an N-Channel Logic Level UltraFET Power MOSFET from On Semiconductor. It is designed for low-voltage switching applications requiring high efficiency and compact packaging. The device is rated for a maximum drain-source voltage of 60V and a continuous drain current of 12A at 25°C case temperature with 10V gate drive. The on-resistance is typically 92mOhm at 10V gate drive and 107mOhm at 5V, enabling logic-level operation.

 

Gate charge is 11.3nC maximum at 10V, and input capacitance is 350pF at 25V drain-source, making this MOSFET suitable for fast switching in power converters and motor control circuits. The operating junction temperature range is -55°C to 175°C, supporting harsh environments.

 

The device is offered in a surface-mount TO-252AA (DPak) package with 3 leads (2 leads plus tab). It is compliant with RoHS3 standards (unverified) and has an MSL of Level 1 (unverified). This part is a direct replacement for the Fairchild Semiconductor HUF76407D3S and is cross-referenced with Digi-Key part number HUF76407D3S-ND.

HUF76407D3S Quick Information

Product Type: N-Channel MOSFET
Series: UltraFET
Canonical Name: HUF76407D3S N-Channel MOSFET, 60V, 12A, TO-252AA
Subcategory: Power MOSFET

HUF76407D3S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HUF76407D3S Estimated Pricing

Qty Low High
956+ $0.31 $0.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUF76407D3S Features

  • N-Channel MOSFET with 60V drain-source rating.
  • Continuous drain current of 12A at 25°C.
  • Low on-resistance of 92mOhm typical.
  • Logic level gate drive capability (4.5V, 10V).
  • Surface mount TO-252AA package.

HUF76407D3S Applications

  • Used in DC-DC converter circuits.
  • Suitable for motor control applications.
  • Ideal for load switching in power supplies.
  • Applied in low-voltage power management.

HUF76407D3S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the HUF76407D3S?

The maximum drain-source voltage is 60 V.

What package is the HUF76407D3S available in?

It is available in the TO-252AA (DPak) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the HUF76407D3S RoHS compliant?

The part is listed as RoHS3 compliant, but this is unverified and has low confidence.

What is the continuous drain current rating?

The continuous drain current is 12 A at Tc=25°C with VGS=10V, and 11 A with VGS=5V.

What is the on-resistance of the HUF76407D3S?

The maximum on-resistance is 92 mOhm at Id=13A, VGS=10V, and 107 mOhm at VGS=5V.

What is the gate threshold voltage?

The maximum gate threshold voltage is 3 V at Id=250µA.

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