HUF76143S3ST N-Channel Power MOSFET from On Semiconductor with 30V drain-source voltage and 75A continuous drain current. Features low on-resistance of 5.5mOhm and surface mount TO-263AB package.
Mfr Part #:

HUF76143S3ST

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET from On Semiconductor with 30V drain-source voltage and 75A continuous drain current. Features low on-resistance of 5.5mOhm and surface mount TO-263AB package.
✓ Total Stock: 5,198 pcs
$ Price Range: $1.04

HUF76143S3ST Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,598 pcs
1598 pcs On Request 1 On Request On Request 0335+ On Request On Request

HUF76143S3ST Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

HUF76143S3ST Description

Short technical summary and product information.

The HUF76143S3ST is an N-Channel Power MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power switching applications.

 

This MOSFET features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 75A at case temperature. The maximum drain-to-source on-resistance (Rds(on)) is 5.5mOhm at Id=75A and Vgs=10V. Gate charge (Qg) is 114nC at Vgs=10V, and input capacitance (Ciss) is 3900pF at Vds=25V. The gate threshold voltage (Vgs(th)) is 3V at Id=250µA. Maximum gate-source voltage is ±20V. Drive voltage range is 4.5V to 10V.

 

Maximum power dissipation is 225W at case temperature. Operating temperature range is -40°C to 150°C junction. The device is surface mountable in a TO-263-3, D²Pak (2 leads + tab), or TO-263AB package. The supplier device package is TO-263AB.

 

Typical applications include power supplies, DC-DC converters, motor control, and other high-current switching circuits. The low on-resistance and high current capability make it suitable for efficient power management.

HUF76143S3ST Quick Information

Product Type: MOSFET
Canonical Name: HUF76143S3ST N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

HUF76143S3ST Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: Non-Compliant

HUF76143S3ST Estimated Pricing

Qty Low High
288+ $1.04 $1.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUF76143S3ST Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • 75A continuous drain current capability.
  • Low on-resistance of 5.5mOhm at 10V gate drive.
  • Surface mount TO-263AB package for easy assembly.
  • Wide operating temperature range from -40°C to 150°C.

HUF76143S3ST Applications

  • Used in high-efficiency power supply designs.
  • Ideal for DC-DC converter circuits.
  • Suitable for motor control applications.
  • Applied in battery management systems.

HUF76143S3ST FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the HUF76143S3ST?

30V.

What package is the HUF76143S3ST available in?

Surface mount TO-263-3, D²Pak (2 leads + tab), or TO-263AB. Supplier device package is TO-263AB.

What is the operating temperature range?

-40°C to 150°C (junction).

Is the HUF76143S3ST RoHS compliant?

RoHS3 compliant (unverified).

What is the maximum drain current?

75A at case temperature.

What is the on-resistance of this MOSFET?

5.5mOhm maximum at Id=75A, Vgs=10V.

What is the gate threshold voltage?

3V maximum at Id=250µA.

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