| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
280 pcs
|
280 pcs | On Request | 1 | On Request | On Request | 98 | On Request | On Request |
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The HUF76137P3 is an N-Channel Logic Level UltraFET Power MOSFET manufactured by Harris Semiconductor. It utilizes an advanced UltraFET process for low on-resistance and high performance.
Key electrical specifications include a drain-source voltage of 30V, a continuous drain current of 75A at 25°C (VGS=10V), and an ultra-low on-resistance of 0.009 Ohm at 75A and 10V. The device also features a gate threshold voltage of 3V (max) at 250µA and a maximum gate-to-source voltage of ±16V.
Designed for applications requiring power efficiency, such as switching regulators, converters, and motor drivers, the HUF76137P3 is suitable for power management in portable and battery-operated products. It is available in a TO-220AB package and is designed for surface mounting.
Thermal characteristics include a maximum power dissipation of 145W at 25°C and an operating temperature range of -40°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage for the HUF76137P3 is 30V.
The maximum continuous drain current is 75A at 25°C with a VGS of 10V.
The on-resistance is 0.009 Ohm when the drain current is 75A and the gate-to-source voltage is 10V.
The operating temperature range is -40°C to 150°C.
The HUF76137P3 is available in the TO-263AB package.
The RoHS status is RoHS3 Compliant.