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HUF76137P3 N-Channel Power MOSFET with 30V drain-source voltage and 75A continuous drain current. Features low on-resistance of 9mOhm at 10V gate drive.
Mfr Part #:

HUF76137P3

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET with 30V drain-source voltage and 75A continuous drain current. Features low on-resistance of 9mOhm at 10V gate drive.
Total Stock: 4,541 pcs
$ Price Range: $1.34

HUF76137P3 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,541 pcs
4541 pcs On Request 1 On Request On Request 04+ On Request On Request

HUF76137P3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

HUF76137P3 Description

Short technical summary and product information.

The HUF76137P3 is an N-Channel power MOSFET manufactured by ON Semiconductor, designed for high-efficiency power switching applications. It features a drain-source voltage (Vdss) of 30V and a continuous drain current of 75A at 25°C case temperature, making it suitable for medium-power circuits.

 

With a maximum on-resistance of 9mOhm at 75A and 10V gate drive, this MOSFET offers low conduction losses. The gate charge is 72nC at 10V, and input capacitance is 2100pF at 25V, enabling efficient switching at moderate frequencies. The device is housed in a TO-220-3 through-hole package (TO-220AB), which provides good thermal dissipation with a maximum power dissipation of 145W at 25°C.

 

Operating over a temperature range of -40°C to 150°C, the HUF76137P3 is suitable for industrial and automotive environments. The gate threshold voltage is 3V maximum at 250µA drain current, and the gate-source voltage rating is ±20V. This MOSFET is ideal for applications such as DC-DC converters, motor control, and power management.

HUF76137P3 Quick Information

Product Type: MOSFET
Canonical Name: HUF76137P3 N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

HUF76137P3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Non-Compliant

HUF76137P3 Estimated Pricing

Qty Low High
224+ $1.34 $1.34

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUF76137P3 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • 75A continuous drain current at 25°C case temperature.
  • Low on-resistance of 9mOhm at 10V gate drive.
  • Maximum power dissipation of 145W.
  • Through-hole TO-220-3 package for easy mounting.

HUF76137P3 Applications

  • Ideal for DC-DC converter circuits.
  • Used in motor control and power management.
  • Suitable for high-efficiency switching power supplies.
  • Applicable in automotive and industrial systems.

HUF76137P3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the HUF76137P3?

30V.

What is the continuous drain current rating?

75A at 25°C case temperature.

What is the on-resistance (Rds(on))?

9mOhm maximum at 75A and 10V gate drive.

What is the operating temperature range?

-40°C to 150°C junction temperature.

What package is the HUF76137P3 available in?

TO-220-3 (TO-220AB).

Is the HUF76137P3 RoHS compliant?

Yes, RoHS3 Compliant (unverified).

What is the gate threshold voltage?

3V maximum at 250µA drain current.

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