| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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917 pcs
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917 pcs | On Request | 1 | On Request | On Request | 0140+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF76129S3ST is an N-Channel enhancement-mode power MOSFET from On Semiconductor. It is designed for high-current switching applications with a maximum drain-source voltage of 30V and a continuous drain current of 56A at Tc=25°C. The device exhibits a maximum on-resistance of 16 Ohm at Vgs=10V and Id=56A. Gate charge is 45 nC at 10V, and input capacitance is 1350 pF at Vds=25V. The threshold voltage is 3V at Id=250µA. The MOSFET can dissipate up to 105W at Tc=25°C and operates over a junction temperature range of -40°C to 150°C. It is packaged in a D2PAK (TO-263) surface mount package, suitable for automated assembly. The HUF76129S3ST is RoHS3 compliant and REACH unaffected according to available data.
The operating temperature range is -40°C to 150°C (junction).
The HUF76129S3ST is available in a D2PAK (TO-263) surface mount package.
Yes, it is RoHS3 compliant.
The maximum drain-source voltage is 30V.
The continuous drain current is 56A at Tc=25°C.
The maximum gate charge is 45 nC at Vgs=10V.