HUF76121P3 N-Channel Power MOSFET, 30V drain-source voltage, 47A continuous drain current, 21mOhm on-resistance, in a TO-220-3 through-hole package.
Mfr Part #:

HUF76121P3

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET, 30V drain-source voltage, 47A continuous drain current, 21mOhm on-resistance, in a TO-220-3 through-hole package.
✓ Total Stock: 800 pcs
$ Price Range: $0.63

HUF76121P3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
800 pcs
800 pcs On Request 1 On Request On Request 03+ On Request On Request

HUF76121P3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

HUF76121P3 Description

Short technical summary and product information.

The HUF76121P3 is an N-Channel enhancement mode power MOSFET manufactured by On Semiconductor. It features a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 47A at case temperature (Tc). The device offers a low on-resistance of 21mOhm maximum at 10V gate drive and 47A drain current, making it suitable for high-efficiency switching applications.

 

Key electrical characteristics include a maximum gate threshold voltage of 3V at 250µA drain current, a maximum gate charge of 30nC at 10V, and an input capacitance of 850pF at 25V drain-source voltage. The device can dissipate up to 75W at case temperature and operates over a junction temperature range of -40°C to 150°C.

 

The HUF76121P3 is housed in a standard TO-220-3 through-hole package (supplier device package TO-220AB), which allows for easy mounting on heatsinks or PCBs. It is designed for general-purpose power switching and can be used in DC-DC converters, motor control, and power management circuits.

HUF76121P3 Quick Information

Product Type: Power MOSFET
Canonical Name: HUF76121P3 N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

HUF76121P3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Non-Compliant

HUF76121P3 Estimated Pricing

Qty Low High
478+ $0.63 $0.63

Estimated market price range - modelled values for guidance only, not live distributor offers.

HUF76121P3 Features

  • N-Channel enhancement mode power MOSFET.
  • 30V maximum drain-source voltage rating.
  • 47A continuous drain current capability.
  • 21mOhm on-resistance at 10V gate drive.
  • TO-220-3 through-hole package for easy mounting.

HUF76121P3 Applications

  • Suitable for DC-DC converter circuits.
  • Used in motor control applications.
  • Ideal for power management in consumer electronics.
  • Can be used in battery protection circuits.

HUF76121P3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the HUF76121P3?

The maximum drain-source voltage (Vdss) is 30V.

What is the continuous drain current rating?

The maximum continuous drain current is 47A at case temperature (Tc).

What is the on-resistance of this MOSFET?

The maximum on-resistance is 21mOhm at 47A drain current and 10V gate-source voltage.

What package does the HUF76121P3 come in?

It comes in a TO-220-3 through-hole package (supplier device package TO-220AB).

What is the operating temperature range?

The operating junction temperature range is -40°C to 150°C.

What is the gate threshold voltage?

The maximum gate threshold voltage is 3V at 250µA drain current.

Is the HUF76121P3 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and has low confidence.

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