| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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25,500 pcs
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25500 pcs | On Request | 1 | On Request | On Request | 02+ | On Request | On Request |
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This is an N-Channel Power MOSFET from onsemi, part number HUF76105SK8T. It is designed for switching applications requiring up to 30V drain-source voltage and 5.5A continuous drain current.
The device features a maximum on-resistance of 50mOhm at 10V gate drive, with recommended drive voltages of 4.5V and 10V. Gate threshold voltage is 3V maximum at 250µA. Input capacitance is 325pF at 25V, and gate charge is 11nC at 10V, enabling efficient switching.
The MOSFET is housed in a surface mount 8-SOIC package (0.154", 3.90mm width) with an operating junction temperature range of -55°C to 150°C. Maximum power dissipation is 2.5W at ambient temperature.
The drain-source voltage rating is 30V.
The continuous drain current is 5.5A at ambient temperature.
The maximum on-resistance is 50mOhm at 5.5A drain current and 10V gate drive.
It uses a surface mount 8-SOIC package (0.154", 3.90mm width).
The operating junction temperature range is -55°C to 150°C.
The existing database indicates RoHS3 compliance, but this is unverified and there is a conflict with distributor data.
The maximum gate charge is 11nC at 10V gate-source voltage.