| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,235 pcs
|
2235 pcs | On Request | 1 | On Request | On Request | 2018 | On Request | On Request | |
|
1,013 pcs
|
1013 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HUF75852G3 is an N-Channel MOSFET from ON Semiconductor, designed for high-power switching applications. It features a drain-source voltage rating of 150V and a continuous drain current of 75A at case temperature. The device offers a low maximum on-resistance of 16 mOhm at 75A and 10V gate drive.
With a maximum power dissipation of 500W and a gate charge of 480 nC, this MOSFET is suitable for efficient power conversion circuits. The input capacitance is 7690 pF at 25V drain-source voltage. The operating temperature range spans from -55°C to 175°C, allowing use in demanding environments.
The HUF75852G3 is housed in a through-hole TO-247-3 package, providing robust mechanical and thermal performance. It is designed for applications requiring high current handling and fast switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $14.02 | $14.02 |
| 10+ | $9.84 | $9.84 |
| 120+ | $8.70 | $8.70 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 150 V.
The package is TO-247-3, with through-hole mounting.
The operating junction temperature range is -55°C to 175°C.
It is listed as RoHS3 Compliant, but this status is unverified.
The maximum on-resistance is 16 mOhm at 75 A drain current and 10 V gate-source voltage.
The maximum continuous drain current is 75 A at case temperature.